The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Identifieur interne : 002281 ( Main/Repository ); précédent : 002280; suivant : 002282The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Auteurs : RBID : Pascal:11-0305344Descripteurs français
- Pascal (Inist)
- Caractéristique électrique, Propriété électrique, Dépôt phase vapeur, Microscopie électronique transmission, Epaisseur, Constante diélectrique, Endommagement, Capacité électrique, Loi échelle, Caractéristique capacité tension, Recuit, Densité état, Etat interface, Etat électronique interface, Bande valence, Distribution énergie, Défaut interface, Structure MIS, Composé du gallium, Courant fuite, Phosphure d'indium, Composé binaire, Matériau amorphe, Interface, Diélectrique permittivité élevée, Alumine, Aluminate de lanthane, Strontium, Semiconducteur III-V, Indium, InP, Al2O3, LaAlO3.
- Wicri :
- concept : Matériau amorphe.
English descriptors
- KwdEn :
- Alumina, Amorphous material, Annealing, Binary compounds, CV characteristic, Capacitance, Damage, Density of states, Electrical characteristic, Electrical properties, Energy distribution, Gallium compounds, High k dielectric, III-V semiconductors, Indium, Indium phosphide, Interface defect, Interface electron state, Interface states, Interfaces, Lanthanum aluminate, Leakage currents, MIS structures, Permittivity, Scaling laws, Strontium, Thickness, Transmission electron microscopy, Valence bands, Vapor deposition.
Abstract
The structural and electrical properties of SrTa2O6(SrTaO)/n-In0.53GaAs0.47(InGaAs)/InP structures where the SrTaO was grown by atomic vapor deposition, were investigated. Transmission electron microscopy revealed a uniform, amorphous SrTaO film having an atomically flat interface with the InGaAs substrate with a SrTaO film thickness of 11.2 nm. The amorphous SrTaO films (11.2 nm) exhibit a dielectric constant of ∼20, and a breakdown field of >8 MV/cm. A capacitance equivalent thickness of ∼1 nm is obtained for a SrTaO thickness of 3.4 nm, demonstrating the scaling potential of the SrTaO/InGaAs MOS system. Thinner SrTaO films (3.4 nm) exhibited increased non-uniformity in thickness. From the capacitance-voltage response of the SrTaO (3.4 nm)/n-InGaAs/InP structure, prior to any post deposition annealing, a peak interface state density of ∼2.3 x 1013 cm eV-1 is obtained located at ∼0.28 eV (±0.05 eV) above the valence band energy (Ev) and the integrated interface state density in range Ev + 0.2 to Ev + 0.7 eV is 6.8 x 1012 cm-2. The peak energy position (0.28 ± 0.05 eV) and the energy distribution of the interface states are similar to other high-k layers on InGaAs, such as Al2O3 and LaAlO3, providing further evidence that the interface defects in the high-k/InGaAs system are intrinsic defects related to the InGaAs surface.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The structural and electrical properties of the SrTa<sub>2</sub>O<sub>6</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP system</title><author><name sortKey="Zhang, P F" uniqKey="Zhang P">P. F. Zhang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Nagle, R E" uniqKey="Nagle R">R. E. Nagle</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Deepak, N" uniqKey="Deepak N">N. Deepak</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Povey, I M" uniqKey="Povey I">I. M. Povey</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Gomeniuk, Y Y" uniqKey="Gomeniuk Y">Y. Y. Gomeniuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="O Connor, E" uniqKey="O Connor E">E. O Connor</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Petkov, N" uniqKey="Petkov N">N. Petkov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Schmidt, M" uniqKey="Schmidt M">M. Schmidt</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="O Regan, T P" uniqKey="O Regan T">T. P. O Regan</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Cherkaoui, K" uniqKey="Cherkaoui K">K. Cherkaoui</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Pemble, M E" uniqKey="Pemble M">M. E. Pemble</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Hurley, P K" uniqKey="Hurley P">P. K. Hurley</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author><author><name sortKey="Whatmore, R W" uniqKey="Whatmore R">R. W. Whatmore</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></inist:fA14><country>Irlande (pays)</country><wicri:noRegion>Cork</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0305344</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0305344 INIST</idno><idno type="RBID">Pascal:11-0305344</idno><idno type="wicri:Area/Main/Corpus">002F20</idno><idno type="wicri:Area/Main/Repository">002281</idno></publicationStmt><seriesStmt><idno type="ISSN">0167-9317</idno><title level="j" type="abbreviated">Microelectron. eng.</title><title level="j" type="main">Microelectronic engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alumina</term><term>Amorphous material</term><term>Annealing</term><term>Binary compounds</term><term>CV characteristic</term><term>Capacitance</term><term>Damage</term><term>Density of states</term><term>Electrical characteristic</term><term>Electrical properties</term><term>Energy distribution</term><term>Gallium compounds</term><term>High k dielectric</term><term>III-V semiconductors</term><term>Indium</term><term>Indium phosphide</term><term>Interface defect</term><term>Interface electron state</term><term>Interface states</term><term>Interfaces</term><term>Lanthanum aluminate</term><term>Leakage currents</term><term>MIS structures</term><term>Permittivity</term><term>Scaling laws</term><term>Strontium</term><term>Thickness</term><term>Transmission electron microscopy</term><term>Valence bands</term><term>Vapor deposition</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique électrique</term><term>Propriété électrique</term><term>Dépôt phase vapeur</term><term>Microscopie électronique transmission</term><term>Epaisseur</term><term>Constante diélectrique</term><term>Endommagement</term><term>Capacité électrique</term><term>Loi échelle</term><term>Caractéristique capacité tension</term><term>Recuit</term><term>Densité état</term><term>Etat interface</term><term>Etat électronique interface</term><term>Bande valence</term><term>Distribution énergie</term><term>Défaut interface</term><term>Structure MIS</term><term>Composé du gallium</term><term>Courant fuite</term><term>Phosphure d'indium</term><term>Composé binaire</term><term>Matériau amorphe</term><term>Interface</term><term>Diélectrique permittivité élevée</term><term>Alumine</term><term>Aluminate de lanthane</term><term>Strontium</term><term>Semiconducteur III-V</term><term>Indium</term><term>InP</term><term>Al2O3</term><term>LaAlO3</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Matériau amorphe</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The structural and electrical properties of SrTa<sub>2</sub>O<sub>6</sub>(SrTaO)/n-In<sub>0.53</sub>GaAs<sub>0.47</sub>(InGaAs)/InP structures where the SrTaO was grown by atomic vapor deposition, were investigated. Transmission electron microscopy revealed a uniform, amorphous SrTaO film having an atomically flat interface with the InGaAs substrate with a SrTaO film thickness of 11.2 nm. The amorphous SrTaO films (11.2 nm) exhibit a dielectric constant of ∼20, and a breakdown field of >8 MV/cm. A capacitance equivalent thickness of ∼1 nm is obtained for a SrTaO thickness of 3.4 nm, demonstrating the scaling potential of the SrTaO/InGaAs MOS system. Thinner SrTaO films (3.4 nm) exhibited increased non-uniformity in thickness. From the capacitance-voltage response of the SrTaO (3.4 nm)/n-InGaAs/InP structure, prior to any post deposition annealing, a peak interface state density of ∼2.3 x 10<sup>13 </sup>cm eV<sup>-1</sup> is obtained located at ∼0.28 eV (±0.05 eV) above the valence band energy (E<sub>v</sub>) and the integrated interface state density in range E<sub>v</sub> + 0.2 to E<sub>v</sub> + 0.7 eV is 6.8 x 10<sup>12</sup> cm<sup>-2</sup>. The peak energy position (0.28 ± 0.05 eV) and the energy distribution of the interface states are similar to other high-k layers on InGaAs, such as Al<sub>2</sub>O<sub>3</sub> and LaAlO<sub>3</sub>, providing further evidence that the interface defects in the high-k/InGaAs system are intrinsic defects related to the InGaAs surface.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0167-9317</s0></fA01><fA02 i1="01"><s0>MIENEF</s0></fA02><fA03 i2="1"><s0>Microelectron. eng.</s0></fA03><fA05><s2>88</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The structural and electrical properties of the SrTa<sub>2</sub>O<sub>6</sub>/In<sub>0.53</sub>Ga<sub>0.47</sub>As/InP system</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (P. F.)</s1></fA11><fA11 i1="02" i2="1"><s1>NAGLE (R. E.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEEPAK (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>POVEY (I. M.)</s1></fA11><fA11 i1="05" i2="1"><s1>GOMENIUK (Y. Y.)</s1></fA11><fA11 i1="06" i2="1"><s1>O'CONNOR (E.)</s1></fA11><fA11 i1="07" i2="1"><s1>PETKOV (N.)</s1></fA11><fA11 i1="08" i2="1"><s1>SCHMIDT (M.)</s1></fA11><fA11 i1="09" i2="1"><s1>O'REGAN (T. P.)</s1></fA11><fA11 i1="10" i2="1"><s1>CHERKAOUI (K.)</s1></fA11><fA11 i1="11" i2="1"><s1>PEMBLE (M. E.)</s1></fA11><fA11 i1="12" i2="1"><s1>HURLEY (P. K.)</s1></fA11><fA11 i1="13" i2="1"><s1>WHATMORE (R. W.)</s1></fA11><fA14 i1="01"><s1>Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row</s1><s2>Cork</s2><s3>IRL</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ><sZ>9 aut.</sZ><sZ>10 aut.</sZ><sZ>11 aut.</sZ><sZ>12 aut.</sZ><sZ>13 aut.</sZ></fA14><fA20><s1>1054-1057</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>20003</s2><s5>354000192201290030</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>25 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0305344</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Microelectronic engineering</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The structural and electrical properties of SrTa<sub>2</sub>O<sub>6</sub>(SrTaO)/n-In<sub>0.53</sub>GaAs<sub>0.47</sub>(InGaAs)/InP structures where the SrTaO was grown by atomic vapor deposition, were investigated. Transmission electron microscopy revealed a uniform, amorphous SrTaO film having an atomically flat interface with the InGaAs substrate with a SrTaO film thickness of 11.2 nm. The amorphous SrTaO films (11.2 nm) exhibit a dielectric constant of ∼20, and a breakdown field of >8 MV/cm. A capacitance equivalent thickness of ∼1 nm is obtained for a SrTaO thickness of 3.4 nm, demonstrating the scaling potential of the SrTaO/InGaAs MOS system. Thinner SrTaO films (3.4 nm) exhibited increased non-uniformity in thickness. From the capacitance-voltage response of the SrTaO (3.4 nm)/n-InGaAs/InP structure, prior to any post deposition annealing, a peak interface state density of ∼2.3 x 10<sup>13 </sup>cm eV<sup>-1</sup> is obtained located at ∼0.28 eV (±0.05 eV) above the valence band energy (E<sub>v</sub>) and the integrated interface state density in range E<sub>v</sub> + 0.2 to E<sub>v</sub> + 0.7 eV is 6.8 x 10<sup>12</sup> cm<sup>-2</sup>. The peak energy position (0.28 ± 0.05 eV) and the energy distribution of the interface states are similar to other high-k layers on InGaAs, such as Al<sub>2</sub>O<sub>3</sub> and LaAlO<sub>3</sub>, providing further evidence that the interface defects in the high-k/InGaAs system are intrinsic defects related to the InGaAs surface.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B70G22C</s0></fC02><fC02 i1="03" i2="X"><s0>001D11G05</s0></fC02><fC02 i1="04" i2="X"><s0>001D11C02A</s0></fC02><fC02 i1="05" i2="X"><s0>240</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="GER"><s0>Elektrische Groesse</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electrical properties</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Dépôt phase vapeur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Vapor deposition</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Transmission electron microscopy</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Epaisseur</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Thickness</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Constante diélectrique</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Permittivity</s0><s5>06</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Endommagement</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Damage</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Capacité électrique</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Capacitance</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Loi 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l="SPA"><s0>Estado electrónico interfase</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Bande valence</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Valence bands</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Distribution énergie</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Energy distribution</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Distribución energía</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Défaut interface</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Interface defect</s0><s5>17</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Structure MIS</s0><s5>18</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>MIS structures</s0><s5>18</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Composé du gallium</s0><s5>19</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Gallium compounds</s0><s5>19</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Courant fuite</s0><s5>20</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Leakage currents</s0><s5>20</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>22</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>22</s5></fC03><fC03 i1="21" i2="X" l="GER"><s0>Indiumphosphid</s0><s5>22</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>22</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Composé binaire</s0><s5>23</s5></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Binary compounds</s0><s5>23</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Matériau amorphe</s0><s5>24</s5></fC03><fC03 i1="23" i2="X" l="ENG"><s0>Amorphous material</s0><s5>24</s5></fC03><fC03 i1="23" i2="X" l="SPA"><s0>Material amorfo</s0><s5>24</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Interface</s0><s5>25</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Interfaces</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Diélectrique permittivité élevée</s0><s5>26</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>High k dielectric</s0><s5>26</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Dieléctrico alta constante dieléctrica</s0><s5>26</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Alumine</s0><s5>27</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Alumina</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Aluminate de lanthane</s0><s5>28</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Lanthanum aluminate</s0><s5>28</s5></fC03><fC03 i1="27" i2="X" l="GER"><s0>Lanthanaluminat</s0><s5>28</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Lantano aluminato</s0><s5>28</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Strontium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Strontium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>31</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>31</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Indium</s0><s2>NC</s2><s5>32</s5></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Indium</s0><s2>NC</s2><s5>32</s5></fC03><fC03 i1="31" i2="3" 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|texte= The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
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